Infineon IPB057N06N Type N-Channel MOSFET, 45 A, 60 V Enhancement, 3-Pin PG-TO263-3
- RS Stock No.:
- 273-2998
- Mfr. Part No.:
- IPB057N06NATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD323.00
(exc. GST)
TWD339.15
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 950 unit(s) shipping from March 30, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD64.60 | TWD323.00 |
| 50 - 95 | TWD60.20 | TWD301.00 |
| 100 - 245 | TWD53.00 | TWD265.00 |
| 250 - 495 | TWD51.20 | TWD256.00 |
| 500 + | TWD45.20 | TWD226.00 |
*price indicative
- RS Stock No.:
- 273-2998
- Mfr. Part No.:
- IPB057N06NATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IPB057N06N | |
| Package Type | PG-TO263-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -5°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 83W | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC 1, IEC61249-2-21 | |
| Height | 1.5mm | |
| Length | 40mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IPB057N06N | ||
Package Type PG-TO263-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -5°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 83W | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC 1, IEC61249-2-21 | ||
Height 1.5mm | ||
Length 40mm | ||
Automotive Standard No | ||
The Infineon power MOSFET is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial appl
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Related links
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