Vishay SIHG Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-247AC SIHG150N60E-GE3
- RS Stock No.:
- 268-8298
- Mfr. Part No.:
- SIHG150N60E-GE3
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 25 units)*
TWD2,675.00
(exc. GST)
TWD2,808.75
(inc. GST)
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Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 75 | TWD107.00 | TWD2,675.00 |
| 100 - 475 | TWD87.70 | TWD2,192.50 |
| 500 + | TWD85.10 | TWD2,127.50 |
*price indicative
- RS Stock No.:
- 268-8298
- Mfr. Part No.:
- SIHG150N60E-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHG | |
| Package Type | TO-247AC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 15.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHG | ||
Package Type TO-247AC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 15.7mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay SIHG Series MOSFET, 650V Drain-Source Voltage, 22A Continuous Drain Current - SIHG150N60E-GE3
This N-channel MOSFET is designed to switch and control high-voltage power in industrial electronics and automation equipment. It operates as an enhancement-mode transistor for use in discrete power stages where high blocking voltage and significant current capacity are required. The device is supplied in a through-hole TO-247AC package suited to conventional assembly and heat-sinking arrangements.
Features and Benefits:
• 650V drain rating enables high-voltage switching applications • 22A continuous current supports substantial load handling • 0.158Ω low Rds(on) reduces conduction losses • 179W power dissipation allows robust thermal throughput • 36nC typical gate charge for predictable switching behaviour • 30V gate tolerance accommodates common drive voltages
Applications
• Suitable for high-voltage DC-DC converters in industrial systems • Ideal for switch-mode power supplies in manufacturing equipment • Used for motor drive stages requiring high-voltage switching • Can be used for line-side power conversion in automation racks • Used for laboratory power electronics development and testing
What temperature range can it operate within?
The device functions across a wide ambient span from -55°C up to a maximum junction limit of 150°C for demanding thermal environments.
How is it best mounted for heat management?
The through-hole TO-247AC format permits direct attachment to heatsinks using the package tab and standard mounting hardware to improve thermal transfer.
What gate drive considerations should be observed?
The gate should be driven within ±30V absolute limits and switching waveforms should account for the typical 36nC gate charge to manage transition losses and driver sizing.
What pin configuration is provided?
It is a three-pin transistor layout compatible with common power PCB footprints and through-hole assembly processes.
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