Vishay EF Type N-Channel Power MOSFET, 13 A, 800 V, 3-Pin TO-247AC SIHG15N80AEF-GE3
- RS Stock No.:
- 225-9913
- Mfr. Part No.:
- SIHG15N80AEF-GE3
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 25 units)*
TWD1,627.50
(exc. GST)
TWD1,709.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 525 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 50 | TWD65.10 | TWD1,627.50 |
| 75 - 100 | TWD63.60 | TWD1,590.00 |
| 125 + | TWD61.80 | TWD1,545.00 |
*price indicative
- RS Stock No.:
- 225-9913
- Mfr. Part No.:
- SIHG15N80AEF-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-247AC | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 156W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 2.39mm | |
| Height | 10.41mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-247AC | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 156W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 2.39mm | ||
Height 10.41mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 13A Drain Current - SIHG15N80AEF-GE3
This power MOSFET is a silicon N‑channel transistor designed for high‑voltage switching and power conversion in industrial environments. It is intended for surface‑mounted assemblies requiring robust drain‑to‑source voltage handling and elevated operating temperatures, making it suitable for demanding electrical and mechanical control systems.
Features and Benefits:
• 800V rating enables high‑voltage switching applications • 13A continuous current supports substantial load drive • 350mΩ Rds(on) reduces conduction losses in power paths • 53nC typical gate charge allows predictable switching control • 156W power dissipation permits sustained thermal loading • 30V maximum gate stress protects gate‑drive circuitry
Applications
• Suitable for high‑voltage inverters in automation systems • Ideal for power supplies in industrial control equipment • Used for motor‑drive switching in electrical assemblies • Can be used for snubber and clamp networks in power electronics
What temperature range can it operate within?
It functions across a broad span from -55°C up to 150°C, enabling use in varied thermal environments.
How is it packaged for mounting on assemblies?
It comes in a TO‑247AC enclosure configured for surface‑mount installation with three connection pins.
What gate drive considerations are relevant for switching?
The gate must be driven within ±30V limits and sized to handle a typical 53nC charge for controlled switching transitions.
How does the device manage power under load?
It can dissipate up to 156W when properly cooled, allowing continuous operation at rated current with adequate thermal management.
Related links
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