STMicroelectronics N-Channel MOSFET, 10 A, 800 V Enhancement Tape & Reel STD80N450K6

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TWD150.00

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TWD157.50

(inc. GST)

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1 - 9TWD150.00
10 - 99TWD145.00
100 - 249TWD136.00
250 - 499TWD125.00
500 +TWD121.00

*price indicative

Packaging Options:
RS Stock No.:
261-5045
Mfr. Part No.:
STD80N450K6
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

800V

Package Type

Tape & Reel

Mount Type

Surface

Maximum Drain Source Resistance Rds

380mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

17.3nC

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics high voltage N-channel power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Worldwide best RDS(on) x area

Worldwide best FOM (figure of merit)

Ultra low gate charge

100 percentage avalanche tested

Zener-protected

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