Infineon iPB Type N-Channel MOSFET, 120 A Enhancement TO-263 IPB120N06S403ATMA2

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 pack of 2 units)*

TWD186.00

(exc. GST)

TWD195.30

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • Plus 984 unit(s) shipping from May 27, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Pack*
2 - 48TWD93.00TWD186.00
50 - 98TWD84.00TWD168.00
100 - 248TWD68.50TWD137.00
250 - 498TWD67.00TWD134.00
500 +TWD57.50TWD115.00

*price indicative

Packaging Options:
RS Stock No.:
260-5118
Mfr. Part No.:
IPB120N06S403ATMA2
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Series

iPB

Package Type

TO-263

Mount Type

Surface

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon N channel optiMOS power MOSFETs provide excellent gate charge. It has highest current capability. This N channel MOSFET transistor operates in enhancement mode.

N channel enhancement mode

MSL1 up to 260°C peak reflow

100% Avalanche tested

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy