Infineon iPB Type N-Channel MOSFET, 180 A Enhancement TO-263 IPB180N06S4H1ATMA2

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Subtotal (1 pack of 2 units)*

TWD281.00

(exc. GST)

TWD295.04

(inc. GST)

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  • 934 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 48TWD140.50TWD281.00
50 - 98TWD126.50TWD253.00
100 - 248TWD103.50TWD207.00
250 - 498TWD102.00TWD204.00
500 +TWD89.00TWD178.00

*price indicative

Packaging Options:
RS Stock No.:
260-5120
Mfr. Part No.:
IPB180N06S4H1ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Series

iPB

Package Type

TO-263

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon N channel optiMOS power MOSFETs provide excellent gate charge. It has highest current capability. This N channel MOSFET transistor operates in enhancement mode.

N channel enhancement mode

MSL1 up to 260°C peak reflow

100% Avalanche tested

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