Infineon iPB Type N-Channel MOSFET, 180 A Enhancement TO-263 IPB180N06S4H1ATMA2
- RS Stock No.:
- 260-5120
- Mfr. Part No.:
- IPB180N06S4H1ATMA2
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
TWD281.00
(exc. GST)
TWD295.04
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 934 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | TWD140.50 | TWD281.00 |
| 50 - 98 | TWD126.50 | TWD253.00 |
| 100 - 248 | TWD103.50 | TWD207.00 |
| 250 - 498 | TWD102.00 | TWD204.00 |
| 500 + | TWD89.00 | TWD178.00 |
*price indicative
- RS Stock No.:
- 260-5120
- Mfr. Part No.:
- IPB180N06S4H1ATMA2
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 180A | |
| Package Type | TO-263 | |
| Series | iPB | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Package Type TO-263 | ||
Series iPB | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon N channel optiMOS power MOSFETs provide excellent gate charge. It has highest current capability. This N channel MOSFET transistor operates in enhancement mode.
N channel enhancement mode
MSL1 up to 260°C peak reflow
100% Avalanche tested
Related links
- Infineon iPB Type N-Channel MOSFET, 180 A Enhancement TO-263
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- Infineon iPB Type N-Channel MOSFET, 120 A Enhancement TO-263 IPB120N06S403ATMA2
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