Infineon IPP Type N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220
- RS Stock No.:
- 260-1215
- Mfr. Part No.:
- IPP60R040S7XKSA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 500 units)*
TWD60,900.00
(exc. GST)
TWD63,945.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from June 14, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 500 - 500 | TWD121.80 | TWD60,900.00 |
| 1000 + | TWD119.30 | TWD59,650.00 |
*price indicative
- RS Stock No.:
- 260-1215
- Mfr. Part No.:
- IPP60R040S7XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | IPP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Typical Gate Charge Qg @ Vgs | 83nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 245W | |
| Forward Voltage Vf | 0.82V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.57mm | |
| Length | 10.36mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series IPP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Typical Gate Charge Qg @ Vgs 83nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 245W | ||
Forward Voltage Vf 0.82V | ||
Maximum Operating Temperature 150°C | ||
Height 4.57mm | ||
Length 10.36mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon Series IPP MOSFET Transistor, 600V Maximum Drain Source Voltage, 13A Maximum Continuous Drain Current - IPP60R040S7XKSA1
This MOSFET transistor is a cutting-edge high-voltage semiconductor component designed for efficient power switching. With robust specifications including a continuous drain current of 13A and a maximum drain-source voltage of 600V, it is encapsulated in a TO-220 package, making it suitable for a variety of applications. Ensuring reliable performance in demanding environments, it operates within a wide temperature range from -55°C to +150°C.
Features & Benefits
• Designed with CoolMOS™ S7 technology to minimise conduction losses
• Offers a low on-state resistance of 40mΩ for enhanced efficiency
• Capable of handling high pulse currents for demanding requirements
• Optimised for low-frequency switching applications, improving system performance
• Built-in features ensure high reliability in static switching scenarios
Applications
• Utilised for solid-state relays and innovative circuit breaker designs
• Ideal for line rectification within high-power performances such as computing and telecommunications
• Applicable in renewable energy solutions, particularly solar inverters
What are the critical features impacting thermal performance?
The device boasts a maximum power dissipation of 245W and a thermal resistance from junction to ambient of 62°C/W, facilitating effective heat management. This ensures longevity and reliability in demanding operational conditions.
How does this component enhance system efficiency for low-frequency applications?
With its low on-state resistance and CoolMOS™ technology, energy losses during operation are significantly reduced, enabling improved overall efficiency and minimising heat generation in low-frequency environments.
What are the recommended practices for using this in high-voltage applications?
It is advisable to evaluate the impact of cosmic radiation during the design phase and consider appropriate design practices, such as using ferrite beads on the gate for parallel applications, to mitigate any potential issues.
Related links
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