Infineon IPP N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 IPP60R160P7XKSA1
- RS Stock No.:
- 258-3895
- Mfr. Part No.:
- IPP60R160P7XKSA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD245.00
(exc. GST)
TWD257.24
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 192 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD122.50 | TWD245.00 |
| 10 - 18 | TWD117.00 | TWD234.00 |
| 20 - 28 | TWD109.00 | TWD218.00 |
| 30 - 38 | TWD102.00 | TWD204.00 |
| 40 + | TWD94.00 | TWD188.00 |
*price indicative
- RS Stock No.:
- 258-3895
- Mfr. Part No.:
- IPP60R160P7XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 900mV | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 900mV | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS P7 super junction MOSFET is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge of the CoolMOS 7th generation platform ensure its high efficiency.
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Ease-of-use in manufacturing environments by stopping ESD failures occurring
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