Infineon iPB N-Channel MOSFET, 120 A, 120 V N TO-263 IPB038N12N3GATMA1

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Subtotal (1 unit)*

TWD211.00

(exc. GST)

TWD221.55

(inc. GST)

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Units
Per unit
1 - 49TWD211.00
50 - 99TWD173.00
100 - 249TWD158.00
250 - 499TWD154.00
500 +TWD138.00

*price indicative

Packaging Options:
RS Stock No.:
259-1546
Mfr. Part No.:
IPB038N12N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

120V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Channel Mode

N

Standards/Approvals

No

Automotive Standard

No

The Infineon 120V optimos family offers at the same time the lowest on-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V optimos technology gives new possibilities for optimized solutions.

Excellent switching performance

World’s lowest R DS(on)

Very low Q g and Q gd

Excellent gate charge x R DS(on) product (FOM)

RoHS compliant halogen free

MSL1 rated 2

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