Infineon AUIRF Type P-Channel MOSFET, 13 A, 150 V Enhancement, 3-Pin TO-252 AUIRFR6215TRL
- RS Stock No.:
- 229-1744
- Mfr. Part No.:
- AUIRFR6215TRL
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD412.00
(exc. GST)
TWD432.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from November 03, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | TWD82.40 | TWD412.00 |
| 10 - 95 | TWD80.40 | TWD402.00 |
| 100 - 245 | TWD78.60 | TWD393.00 |
| 250 - 495 | TWD77.00 | TWD385.00 |
| 500 + | TWD71.40 | TWD357.00 |
*price indicative
- RS Stock No.:
- 229-1744
- Mfr. Part No.:
- AUIRFR6215TRL
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | AUIRF | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 295mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 110W | |
| Forward Voltage Vf | -1.6V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 66nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Width | 6.73 mm | |
| Length | 6.22mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series AUIRF | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 295mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 110W | ||
Forward Voltage Vf -1.6V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 66nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Width 6.73 mm | ||
Length 6.22mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon single p channel HEXFET power MOSFET in a D-pack package allows repetitive avalanche up to Tjmax. It has fast switching speed and it is lead free.
It is RoHS compliant and AEC qualified
It has 175°C operating temperature
Related links
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- Infineon HEXFET Type P-Channel MOSFET -150 V TO-252