Infineon IPW N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-247 IPW60R099C7XKSA1
- RS Stock No.:
- 258-3906
- Mfr. Part No.:
- IPW60R099C7XKSA1
- Manufacturer:
- Infineon
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TWD4,854.00
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TWD5,096.70
(inc. GST)
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Units | Per unit | Per Tube* | Saving |
|---|---|---|---|
| 30 - 30 | TWD161.80 | TWD4,854.00 | - |
| 60 + | TWD157.00 | TWD4,710.00 | TWD288.00 |
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- RS Stock No.:
- 258-3906
- Mfr. Part No.:
- IPW60R099C7XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | IPW | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 110W | |
| Forward Voltage Vf | 900mV | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series IPW | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 110W | ||
Forward Voltage Vf 900mV | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS C7 super junction MOSFET series offers a ∼50% reduction in turn-off losses compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The MOSFET is also a perfect match for high-power-density charger designs. Efficiency and TCO applications such as hyper data centres and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ∼10% for PSU energy loss.
Increased switching frequency
Best R (on)A in the world
Rugged body diode
Measure showing key parameter for light load and full load efficiency
Doubling the switching frequency will half the size of magnetic components
Smaller packages for same R DS(on)
Can be used in many more positions for both hard and soft switching topologies
Related links
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