Infineon IAUC Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TDSON IAUC100N04S6N022ATMA1
- RS Stock No.:
- 258-0910
- Mfr. Part No.:
- IAUC100N04S6N022ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD203.00
(exc. GST)
TWD213.15
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 14,940 unit(s) shipping from January 26, 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | TWD40.60 | TWD203.00 |
| 10 - 95 | TWD38.60 | TWD193.00 |
| 100 - 245 | TWD36.20 | TWD181.00 |
| 250 - 495 | TWD33.60 | TWD168.00 |
| 500 + | TWD31.20 | TWD156.00 |
*price indicative
- RS Stock No.:
- 258-0910
- Mfr. Part No.:
- IAUC100N04S6N022ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IAUC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Power Dissipation Pd | 75W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IAUC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Power Dissipation Pd 75W | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS 6 40V power MOS technology in the 5x6mm² SS08 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products which enables the customer to find the best product fit in the their applications. All of this enables the best-in-class product FOM and performance on the market. The new SS08 product offers 120A continuous current ratings, which is >25% higher than the standard DPAK at almost half of its footprint area.
N-channel - Enhancement mode - normal LevelAEC Q101 qualified
MSL1 up to 260°C peak reflow
Green Product (RoHS compliant)
100% Avalanche tested
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