Infineon IAUC Type N-Channel MOSFET, 100 A, 80 V Enhancement, 8-Pin TDSON IAUC100N08S5N031ATMA1
- RS Stock No.:
- 258-0912
- Mfr. Part No.:
- IAUC100N08S5N031ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
TWD114.00
(exc. GST)
TWD119.70
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 4,822 unit(s) shipping from January 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD57.00 | TWD114.00 |
| 10 - 98 | TWD54.50 | TWD109.00 |
| 100 - 248 | TWD51.00 | TWD102.00 |
| 250 - 498 | TWD47.50 | TWD95.00 |
| 500 + | TWD44.00 | TWD88.00 |
*price indicative
- RS Stock No.:
- 258-0912
- Mfr. Part No.:
- IAUC100N08S5N031ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | IAUC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 167W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, DIN IEC 68-1 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series IAUC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 167W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, DIN IEC 68-1 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-5 power-transistor is N-channel enhancement mode. It has 175°C operating temperature.
AEC qualified
MSL1 up to 260°C peak reflow
Related links
- Infineon IAUC Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON IAUC100N04S6N022ATMA1
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON IAUC100N04S6N015ATMA1
- Infineon IAUC Type N-Channel MOSFET 80 V Enhancement, 8-Pin SuperSO
- Infineon IAUC Type N-Channel MOSFET 80 V Enhancement, 8-Pin SuperSO IAUC100N08S5N043ATMA1
- Infineon IAUC Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON