Infineon HEXFET Type N-Channel MOSFET, -7.4 A, -12 V, 8-Pin SO-8 IRF7329TRPBF
- RS Stock No.:
- 257-9308
- Mfr. Part No.:
- IRF7329TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD216.00
(exc. GST)
TWD226.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 5 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD43.20 | TWD216.00 |
| 50 - 95 | TWD40.80 | TWD204.00 |
| 100 - 495 | TWD38.80 | TWD194.00 |
| 500 - 1995 | TWD35.80 | TWD179.00 |
| 2000 + | TWD33.20 | TWD166.00 |
*price indicative
- RS Stock No.:
- 257-9308
- Mfr. Part No.:
- IRF7329TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -7.4A | |
| Maximum Drain Source Voltage Vds | -12V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 199mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | ±8 V | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 8.1nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Length | 5mm | |
| Width | 4 mm | |
| Height | 1.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -7.4A | ||
Maximum Drain Source Voltage Vds -12V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 199mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs ±8 V | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 8.1nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Length 5mm | ||
Width 4 mm | ||
Height 1.75mm | ||
Automotive Standard No | ||
The Infineon IRF series is the -12V dual p channel HEXFET power mosfet in a SO 8 package.
RoHS Compliant
Low RDS (on)
Dual p channel mosfet
Related links
- Infineon HEXFET Type N-Channel MOSFET -12 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 20 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET -30 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET -20 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 60 V, 8-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 100 V, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin SO-8