Infineon HEXFET Type N-Channel MOSFET, -9 A, 20 V, 8-Pin SO-8 IRF7324TRPBF
- RS Stock No.:
- 257-9303
- Mfr. Part No.:
- IRF7324TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD166.00
(exc. GST)
TWD174.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 1,080 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD33.20 | TWD166.00 |
| 50 - 95 | TWD31.60 | TWD158.00 |
| 100 - 495 | TWD29.60 | TWD148.00 |
| 500 - 1995 | TWD27.40 | TWD137.00 |
| 2000 + | TWD25.40 | TWD127.00 |
*price indicative
- RS Stock No.:
- 257-9303
- Mfr. Part No.:
- IRF7324TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.75mm | |
| Standards/Approvals | RoHS | |
| Width | 4 mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.75mm | ||
Standards/Approvals RoHS | ||
Width 4 mm | ||
Length 5mm | ||
Automotive Standard No | ||
The Infineon IRF series is the -20V dual p channel HEXFET power mosfet in a SO 8 package.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount power package
Capable of being wave soldered
Related links
- Infineon HEXFET Type N-Channel MOSFET 20 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET -20 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET -20 V, 8-Pin SO-8 IRF7404TRPBF
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 IRF7469TRPBF
- Infineon HEXFET Type N-Channel MOSFET -12 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET -30 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin SO-8