Vishay SI5936DU Type N-Channel MOSFET, 6 A, 30 V, 8-Pin PowerPAK ChipFET SI5936DU-T1-GE3

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Subtotal (1 pack of 5 units)*

TWD134.00

(exc. GST)

TWD140.70

(inc. GST)

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Per Pack*
5 - 45TWD26.80TWD134.00
50 - 95TWD25.20TWD126.00
100 - 245TWD24.20TWD121.00
250 - 995TWD22.40TWD112.00
1000 +TWD20.60TWD103.00

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Packaging Options:
RS Stock No.:
256-7377
Mfr. Part No.:
SI5936DU-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK ChipFET

Series

SI5936DU

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.4Ω

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

0.85mm

Automotive Standard

No

Vishay SI5936DU Series MOSFET, 30V Maximum Drain Source Voltage, 6A Maximum Continuous Drain Current - SI5936DU-T1-GE3


This MOSFET is a surface-mount N-channel transistor designed for switching and power-management roles in electronic systems. It operates as a low-resistance switch suitable for Compact board assemblies, offering a balance of current handling and voltage rating for a range of industrial control and power-conversion tasks.

Features and Benefits:


• 30V rating enables intermediate-voltage switching for control circuits • 6A continuous drain current supports moderate load currents • 0.04Ω Rds(on) reduces conduction losses during operation • 3.5nC typical gate charge for fast, low-energy switching • 10.4W power dissipation allows sustained thermal loading • +150°C maximum operating temperature tolerates high-temperature environments

Applications


• Suitable for motor drive gate-stage switching in automation systems • Ideal for DC-DC converters in industrial power supplies • Used for load switching in embedded control modules • Can be used for power-management in test and measurement equipment

What mounting format does it require on a PCB?


It uses a surface-mount package with an 8-pin footprint suited to automated assembly and Compact layouts.

How does the gate-charge Value affect drive requirements?


A 3.5nC typical gate charge means lower gate-drive energy and Faster transitions compared with higher-Qg devices, reducing gate-driver sizing and switching losses.

What environmental temperature range can it withstand?


It is rated for operation from -55°C up to +150°C, allowing use across wide thermal conditions without derating within that span.

What maximum gate-to-source voltage can I apply?


The device accepts up to 20V between gate and source, defining the allowable drive amplitude for safe operation.

What mechanical package type is provided for heat dissipation?


It is supplied in a PowerPAK ChipFET package that aids thermal transfer for higher dissipation levels.

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