Vishay SIS9634LDN 4 Dual N-Channel MOSFET, 6 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8 SIS9634LDN-T1-GE3
- RS Stock No.:
- 268-8345
- Mfr. Part No.:
- SIS9634LDN-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD328.00
(exc. GST)
TWD344.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 40 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD65.60 | TWD328.00 |
| 50 - 95 | TWD58.80 | TWD294.00 |
| 100 - 245 | TWD45.80 | TWD229.00 |
| 250 + | TWD44.80 | TWD224.00 |
*price indicative
- RS Stock No.:
- 268-8345
- Mfr. Part No.:
- SIS9634LDN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Dual N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212-8 | |
| Series | SIS9634LDN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 60V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, UIS tested 100 percent | |
| Number of Elements per Chip | 4 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Dual N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212-8 | ||
Series SIS9634LDN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 60V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, UIS tested 100 percent | ||
Number of Elements per Chip 4 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay dual N channel TrenchFET 4 generation power MOSFET that is fully lead pb and halogen free device. It is optimized and ratio reduces switching related power loss and it is used in applications such as synchronous rectification, motor drive contr
ROHS compliant
UIS tested 100 percent
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