Infineon BSS N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23 BSS159NH6906XTSA1
- RS Stock No.:
- 250-0549
- Distrelec Article No.:
- 304-40-499
- Mfr. Part No.:
- BSS159NH6906XTSA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD196.00
(exc. GST)
TWD205.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 47,350 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | TWD39.20 | TWD196.00 |
| 10 - 95 | TWD35.00 | TWD175.00 |
| 100 - 245 | TWD34.20 | TWD171.00 |
| 250 - 495 | TWD33.40 | TWD167.00 |
| 500 + | TWD32.80 | TWD164.00 |
*price indicative
- RS Stock No.:
- 250-0549
- Distrelec Article No.:
- 304-40-499
- Mfr. Part No.:
- BSS159NH6906XTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | BSS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series BSS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon makes N-channel Depletion mode small signal MOSFET transistor widely used in high-switching applications. It is avalanche rated and halogen-free. It is SIPMOS Small-Signal-Transistor. It is dv /dt rated, available with V GS(th) indicator on reel. It is 100% lead-free; Halogen-free.
VDS is 60 V, RDS(on),max 8 Ω and IDSS,min is 0.13 A
Maximum power dissipation is 360 mW
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