Infineon IAUZ N-Channel MOSFET, 100 A, 1.2 kV Enhancement, 8-Pin AG-EASY2B F3L8MR12W2M1HPB11BPSA1
- RS Stock No.:
- 250-0217
- Mfr. Part No.:
- F3L8MR12W2M1HPB11BPSA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 tray of 18 units)*
TWD69,996.60
(exc. GST)
TWD73,496.52
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from December 21, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 18 - 18 | TWD3,888.70 | TWD69,996.60 |
| 36 + | TWD3,772.10 | TWD67,897.80 |
*price indicative
- RS Stock No.:
- 250-0217
- Mfr. Part No.:
- F3L8MR12W2M1HPB11BPSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | AG-EASY2B | |
| Series | IAUZ | |
| Mount Type | Screw | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type AG-EASY2B | ||
Series IAUZ | ||
Mount Type Screw | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolSiC MOSFET EasyPACK™ 2B 1200 V / 8 mΩ 3-Level module with CoolSiC™ MOSFET with enhanced generation 1, integrated NTC temperature sensor, pre-applied thermal interface material and PressFIT Contact Technology.
High current density
Low switching losses
Rugged mounting due to integrated mounting clamps
Integrated NTC temperature sensor
PressFIT contact technology
Pre-applied thermal interface material
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