Infineon IAUZ N-Channel MOSFET, 30 A, 60 V Enhancement, 8-Pin PQFN IAUZ30N06S5L140ATMA1
- RS Stock No.:
- 249-6898
- Mfr. Part No.:
- IAUZ30N06S5L140ATMA1
- Manufacturer:
- Infineon
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- RS Stock No.:
- 249-6898
- Mfr. Part No.:
- IAUZ30N06S5L140ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IAUZ | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IAUZ | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IAUZ Series MOSFET, 60V Maximum Drain‑Source Voltage, 30A Maximum Continuous Drain Current - IAUZ30N06S5L140ATMA1
This MOSFET is an N‑channel enhancement device designed for high‑current switching in Compact surface‑mount assemblies. It operates across a wide thermal range and is built for demanding environments where low conduction loss and substantial power handling are required.
Features and Benefits:
• 14mΩ Rds(on) reduces conduction losses for efficient power delivery
• 81W power dissipation supports sustained high‑power operation
• 80nC typical gate charge enables controlled switching with moderate drive energy
• 20V gate tolerance allows use with higher‑voltage gate‑drive circuits
• PQFN package improves the thermal path for surface‑mounted assemblies
• 81W power dissipation supports sustained high‑power operation
• 80nC typical gate charge enables controlled switching with moderate drive energy
• 20V gate tolerance allows use with higher‑voltage gate‑drive circuits
• PQFN package improves the thermal path for surface‑mounted assemblies
Applications
• Suitable for 60V automotive power‑distribution circuits
• Ideal for high‑current DC-DC converters in vehicles
• Used with motor‑drive stages in automotive electronics
• Can be used for switch‑mode power supplies requiring Compact mounting
• Suitable for high‑temperature control electronics in harsh environments
• Ideal for high‑current DC-DC converters in vehicles
• Used with motor‑drive stages in automotive electronics
• Can be used for switch‑mode power supplies requiring Compact mounting
• Suitable for high‑temperature control electronics in harsh environments
What temperature range can it sustain in operation?
It is rated to function from -55°C up to 175°C.
How does the package support thermal management?
The PQFN form provides a direct thermal route to the PCB for improved heat transfer.
What gate‑drive considerations apply for switching?
Expect a typical gate charge of 80nC at the specified gate voltage, requiring a driver capable of sourcing that charge for Rapid transitions.
Which mounting method is intended for installation?
It is designed for surface‑mount placement on PCB assemblies.
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