Littelfuse N-Channel SiC Power Module, 36 A, 12 V Enhancement, 3-Pin TO-220 IXFP36N60X3
- RS Stock No.:
- 245-7009
- Mfr. Part No.:
- IXFP36N60X3
- Manufacturer:
- Littelfuse
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- RS Stock No.:
- 245-7009
- Mfr. Part No.:
- IXFP36N60X3
- Manufacturer:
- Littelfuse
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Littelfuse | |
| Product Type | SiC Power Module | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Maximum Power Dissipation Pd | 446W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Littelfuse | ||
Product Type SiC Power Module | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Maximum Gate Source Voltage Vgs 8V | ||
Maximum Power Dissipation Pd 446W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Littelfuse product is a 600V X3 Class Ultra Junction MOSFET available in 36A nominal current rating and TO 220 package. These Power MOSFETs feature significantly reduced channel resistance RDS on and gate charge Qg. They feature the lowest figures of merit RDS on and RDS on. These benefits enable designers to achieve higher efficiency using simplified thermal design. This HiPerFET series of power MOSFETs feature body diodes which offer low reverse recovery charge and short reverse recovery time.
Low static losses
Well-suited for high frequency applications
Simplified thermal design
High ruggedness against overvoltage
Low gate drive power demand
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