Infineon ISP Type P-Channel MOSFET, 3.7 A, 60 V Enhancement, 3-Pin SOT-223 ISP650P06NMXTSA1
- RS Stock No.:
- 243-9277
- Mfr. Part No.:
- ISP650P06NMXTSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
TWD100.00
(exc. GST)
TWD105.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 368 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD50.00 | TWD100.00 |
| 10 - 98 | TWD48.50 | TWD97.00 |
| 100 - 248 | TWD47.50 | TWD95.00 |
| 250 - 498 | TWD46.00 | TWD92.00 |
| 500 + | TWD44.50 | TWD89.00 |
*price indicative
- RS Stock No.:
- 243-9277
- Mfr. Part No.:
- ISP650P06NMXTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | ISP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series ISP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon P-Channel small signal transistor have Pb-free lead plating. The drain current and drain-source voltage of MOSFET is -3.7A and -60V respectively. It has very low resistance value. The operating temperature is ranges from -55 °C to 150 °C.
Surface Mount technology
Logic level availability
Easy interface to Microcontroller Unit (MCU)
Fast switching
avalanche ruggedness
Related links
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