Infineon ISP Type P-Channel MOSFET, 3.9 A, 100 V Enhancement, 3-Pin SOT-223 ISP16DP10LMXTSA1
- RS Stock No.:
- 235-4877
- Mfr. Part No.:
- ISP16DP10LMXTSA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD176.00
(exc. GST)
TWD184.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from April 26, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | TWD35.20 | TWD176.00 |
| 10 - 95 | TWD34.60 | TWD173.00 |
| 100 - 245 | TWD34.20 | TWD171.00 |
| 250 - 495 | TWD33.20 | TWD166.00 |
| 500 + | TWD32.60 | TWD163.00 |
*price indicative
- RS Stock No.:
- 235-4877
- Mfr. Part No.:
- ISP16DP10LMXTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Series | ISP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.38Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 5W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.2mm | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Height | 5.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Series ISP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.38Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 5W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 1.2mm | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Height 5.35mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ P-Channel MOSFETs 100V in SOT-223 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.
Ideal for high and low switching frequency
Avalanche ruggedness
Industry standard footprint surface mount package
Robust, reliable performance
Increased security of supply
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