Vishay EF Type N-Channel Power MOSFET, 20 A, 800 V, 3-Pin TO-220AB SIHP24N80AEF-GE3
- RS Stock No.:
- 239-5383
- Mfr. Part No.:
- SIHP24N80AEF-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD363.00
(exc. GST)
TWD381.16
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 30 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD181.50 | TWD363.00 |
| 10 - 18 | TWD177.00 | TWD354.00 |
| 20 - 24 | TWD171.50 | TWD343.00 |
| 26 - 98 | TWD168.00 | TWD336.00 |
| 100 + | TWD163.50 | TWD327.00 |
*price indicative
- RS Stock No.:
- 239-5383
- Mfr. Part No.:
- SIHP24N80AEF-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | EF | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.195Ω | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 208W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series EF | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.195Ω | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 208W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 20A Continuous Drain Current - SIHP24N80AEF-GE3
This power MOSFET is a high-voltage N-channel switching device designed for through-hole power electronics. It is intended for use in environments requiring robust switching at elevated voltages and currents, delivering controlled conduction and fast switching behaviour for industrial and converter applications while operating across a very wide temperature range.
Features and Benefits:
• 800V drain-source rating enables high-voltage switching
• 20A continuous drain current supports heavy load handling
• 0.195Ω low Rds(on) reduces conduction losses
• 208W power dissipation allows high-power operation
• 90nC typical gate charge yields predictable switching dynamics
• 30V gate-source maximum protects gate integrity
• 20A continuous drain current supports heavy load handling
• 0.195Ω low Rds(on) reduces conduction losses
• 208W power dissipation allows high-power operation
• 90nC typical gate charge yields predictable switching dynamics
• 30V gate-source maximum protects gate integrity
Applications
• Suitable for high-voltage DC-DC converter stages
• Ideal for power supply primary switch functions
• Used with motor drive front-end circuits
• Can be used for industrial inverter switching
• Suitable for laboratory high-voltage test rigs
• Ideal for power supply primary switch functions
• Used with motor drive front-end circuits
• Can be used for industrial inverter switching
• Suitable for laboratory high-voltage test rigs
What package and mounting method does it use?
It is supplied in a TO-220AB package and is intended for through-hole mounting to allow straightforward heatsinking and chassis attachment.
What thermal range can it withstand in demanding environments?
The device is specified to operate from -55°C up to 150°C, accommodating wide ambient and elevated junction temperatures.
How does the forward voltage affect switching performance?
The typical forward voltage of 1.2V indicates conduction-threshold behaviour during body-diode conduction and influences loss calculations during reverse-recovery and freewheeling events.
Is this device suitable for automotive-standard designs?
It is not designated to meet automotive standards and should not be assumed compliant with automotive-specific requirements.
Related links
- Vishay EF Type N-Channel Power MOSFET 800 V, 3-Pin TO-220AB SIHP24N80AEF-GE3
- Vishay EF Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220AB
- Vishay EF Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220AB SIHP11N80AEF-GE3
- Vishay EF Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220AB SiHP105N60EF-GE3
- Vishay EF Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP186N60EF-GE3
- Vishay EF Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC
- Vishay EF Type N-Channel Power MOSFET 800 V, 3-Pin TO-247AC SIHG15N80AEF-GE3
- Vishay EF Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC SIHG11N80AEF-GE3