Vishay EF Type N-Channel Power MOSFET, 20 A, 800 V, 3-Pin TO-220AB SIHP24N80AEF-GE3
- RS Stock No.:
- 239-5382
- Mfr. Part No.:
- SIHP24N80AEF-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
TWD4,025.00
(exc. GST)
TWD4,226.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from February 01, 2027
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD80.50 | TWD4,025.00 |
| 100 - 450 | TWD78.90 | TWD3,945.00 |
| 500 - 950 | TWD77.30 | TWD3,865.00 |
| 1000 + | TWD75.00 | TWD3,750.00 |
*price indicative
- RS Stock No.:
- 239-5382
- Mfr. Part No.:
- SIHP24N80AEF-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | EF | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.195Ω | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 208W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series EF | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.195Ω | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 208W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 20A Drain Current - SIHP24N80AEF-GE3
This power MOSFET is a high-voltage N-channel switching device designed for power conversion and control in industrial electronic systems. It is supplied in a through-hole TO-220AB package for straightforward mounting and heat-sink attachment, and it is intended for applications that require robust voltage handling and elevated operating temperatures.
Features and Benefits:
• 800V drain rating enables high-voltage switching applications • 20A continuous drain current supports significant load currents • 0.195Ω Rds(on) reduces conduction losses under load • 208W power dissipation allows higher thermal loading • 90nC typical gate charge facilitates switching performance optimisation • 150°C maximum junction temperature endures elevated thermal environments
Applications
• Suitable for high-voltage power supplies and converters • Ideal for industrial motor drive switching stages • Used for switched-mode power supplies in automation equipment • Can be used for power regulation in electrical control panels
What gate voltage limits must be observed during drive design?
The device requires gate drive voltages within ±30V maximum between gate and source to avoid gate overstress.
How should thermal management be approached for sustained operation?
Use a heat-sink attached to the TO-220AB tab and ensure adequate airflow to handle up to 208W dissipation under specified mounting and cooling conditions.
What temperature range is acceptable for deployment in harsh environments?
The component operates from -55°C up to a maximum of 150°C junction temperature, permitting use in elevated-temperature assemblies.
Are there considerations for switching speed versus drive energy?
The typical gate charge of 90nC requires sufficient drive current to achieve desired switching times while managing gate-drive energy and EMI.
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