Toshiba Type N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 SSM6N7002KFU,LF(T
- RS Stock No.:
- 236-3582
- Mfr. Part No.:
- SSM6N7002KFU,LF(T
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 200 units)*
TWD340.00
(exc. GST)
TWD356.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 27,400 unit(s) shipping from January 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 200 - 200 | TWD1.70 | TWD340.00 |
| 400 - 600 | TWD1.70 | TWD340.00 |
| 800 - 1000 | TWD1.60 | TWD320.00 |
| 1200 - 2800 | TWD1.60 | TWD320.00 |
| 3000 + | TWD1.60 | TWD320.00 |
*price indicative
- RS Stock No.:
- 236-3582
- Mfr. Part No.:
- SSM6N7002KFU,LF(T
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | US6 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -0.79V | |
| Typical Gate Charge Qg @ Vgs | 0.39nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Width | 2 mm | |
| Length | 2.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type US6 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -0.79V | ||
Typical Gate Charge Qg @ Vgs 0.39nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Width 2 mm | ||
Length 2.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Toshiba field effect transistor made up of the silicon material and having N channel MOS type. It is mainly used in high speed switching applications.
Storage temperature range −55 to 150 °C
Related links
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