Nexperia BSH201 Type P-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 124-2288
- Mfr. Part No.:
- BSH201,215
- Manufacturer:
- Nexperia
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 3000 units)*
TWD10,500.00
(exc. GST)
TWD11,040.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 3,000 unit(s) shipping from May 13, 2026
- Plus 3,000 unit(s) shipping from June 03, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | TWD3.50 | TWD10,500.00 |
| 6000 + | TWD3.40 | TWD10,200.00 |
*price indicative
- RS Stock No.:
- 124-2288
- Mfr. Part No.:
- BSH201,215
- Manufacturer:
- Nexperia
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | BSH201 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.3V | |
| Typical Gate Charge Qg @ Vgs | 3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 417mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series BSH201 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.3V | ||
Typical Gate Charge Qg @ Vgs 3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 417mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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