Toshiba N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 SSM3K339R,LF(T

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Subtotal (1 pack of 100 units)*

TWD500.00

(exc. GST)

TWD525.00

(inc. GST)

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Units
Per unit
Per Pack*
100 - 100TWD5.00TWD500.00
200 - 200TWD4.90TWD490.00
300 - 400TWD4.70TWD470.00
500 - 900TWD4.60TWD460.00
1000 +TWD4.40TWD440.00

*price indicative

Packaging Options:
RS Stock No.:
236-3578
Mfr. Part No.:
SSM3K339R,LF(T
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

40V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

220mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

12V

Forward Voltage Vf

-0.85V

Typical Gate Charge Qg @ Vgs

1.1nC

Maximum Power Dissipation Pd

2W

Maximum Operating Temperature

150°C

Length

2.4mm

Width

2.9mm

Standards/Approvals

No

Height

800μm

Automotive Standard

No

The Toshiba field effect transistor made up of the silicon material and having N channel MOS type. It is mainly used in power management switching applications.

Storage temperature range −55 to 150 °C

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