ROHM Type N-Channel MOSFET, 10.5 A, 60 V Enhancement, 8-Pin SOP SH8KC7TB1
- RS Stock No.:
- 235-2815
- Mfr. Part No.:
- SH8KC7TB1
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD415.00
(exc. GST)
TWD435.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 2,420 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | TWD41.50 | TWD415.00 |
| 50 - 90 | TWD40.30 | TWD403.00 |
| 100 - 240 | TWD39.40 | TWD394.00 |
| 250 - 990 | TWD38.50 | TWD385.00 |
| 1000 + | TWD37.60 | TWD376.00 |
*price indicative
- RS Stock No.:
- 235-2815
- Mfr. Part No.:
- SH8KC7TB1
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.2mm | |
| Length | 4.05mm | |
| Standards/Approvals | No | |
| Width | 1.75 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 5.2mm | ||
Length 4.05mm | ||
Standards/Approvals No | ||
Width 1.75 mm | ||
Automotive Standard No | ||
The ROHM low on-resistance MOSFET Ideal for switching applications. This product includes two 60V MOSFETs in a small surface mount package.
Pb-free plating
Halogen Free
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