Infineon IPTC N-Channel MOSFET, 396 A, 80 V Enhancement, 16-Pin HDSOP IPTC012N08NM5ATMA1
- RS Stock No.:
- 233-4373
- Mfr. Part No.:
- IPTC012N08NM5ATMA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD583.00
(exc. GST)
TWD612.16
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 1,548 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD291.50 | TWD583.00 |
| 10 - 98 | TWD285.50 | TWD571.00 |
| 100 - 248 | TWD279.50 | TWD559.00 |
| 250 - 498 | TWD275.00 | TWD550.00 |
| 500 + | TWD255.00 | TWD510.00 |
*price indicative
- RS Stock No.:
- 233-4373
- Mfr. Part No.:
- IPTC012N08NM5ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 396A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | HDSOP | |
| Series | IPTC | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 175nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.1mm | |
| Height | 2.35mm | |
| Width | 10.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 396A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type HDSOP | ||
Series IPTC | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 175nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.1mm | ||
Height 2.35mm | ||
Width 10.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IPTC012N08NM5 is part of OptiMOS 5 power MOSFET in TOLT in that TO-Leaded top side-cooling package for superior thermal performance. This innovative package combined with the key features of OptiMOS 5 technology allows best-in-class products in 80 V as well as high current rating 300 A for high power density designs. With top side-cooling setup the drain is exposed at the surface of the package and 95 percent of the heat dissipation can be promoted directly to the heatsink achieving 20 percent better RthJA and 50 percent improved RthJC compared to TOLL package. With bottom side cooling packages like TOLL or D2PAK, the heat is dissipated via the PCB to the heatsink causing high power losses.
Negative stand-off
Saving in cooling system
Increased system efficiency enabling extended battery life time
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