STMicroelectronics Single RF3L N-Channel MOSFET, 90 V Enhancement, 5-Pin LBB RF3L05250CB4
- RS Stock No.:
- 230-0089
- Mfr. Part No.:
- RF3L05250CB4
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 230-0089
- Mfr. Part No.:
- RF3L05250CB4
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Operating Frequency | 650MHz | |
| Maximum Drain Source Voltage Vds | 90V | |
| Package Type | LBB | |
| Series | RF3L | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Channel Mode | Enhancement | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 200°C | |
| Height | 4.85mm | |
| Length | 28.95mm | |
| Width | 16.51mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Typical Power Gain | 18dB | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Operating Frequency 650MHz | ||
Maximum Drain Source Voltage Vds 90V | ||
Package Type LBB | ||
Series RF3L | ||
Mount Type Surface | ||
Pin Count 5 | ||
Channel Mode Enhancement | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 200°C | ||
Height 4.85mm | ||
Length 28.95mm | ||
Width 16.51mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Typical Power Gain 18dB | ||
The STMicroelectronics RF3L05250CB4 is a 250 W 28/32 V LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1 GHz. It can be used in class AB/B and C for all typical modulation formats.
High efficiency and linear gain operations
Integrated ESD protection
Large positive and negative gate/source voltage range for improved class C operation
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