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onsemi SiC Power N-Channel MOSFET, 55 A, 650 V N, 4-Pin TO-247 NTH4L045N065SC1

RS Stock No.:: 229-6460
Mfr. Part No.:: NTH4L045N065SC1
Manufacturer:: onsemi

onsemi SiC Power N-Channel MOSFET, 55 A, 650 V N, 4-Pin TO-247 NTH4L045N065SC1

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Subtotal (1 unit)*

TWD412.00

(exc. GST)

TWD432.60

(inc. GST)

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Units	Per unit
1 - 9	TWD412.00
10 - 49	TWD402.00
50 - 99	TWD395.00
100 - 224	TWD386.00
225 +	TWD378.00

*price indicative

RS Stock No.:: 229-6460
Mfr. Part No.:: NTH4L045N065SC1
Manufacturer:: onsemi

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	55A
	Maximum Drain Source Voltage Vds	650V
	Series	SiC Power
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	50mΩ
	Channel Mode	N
	Maximum Power Dissipation Pd	187W
	Typical Gate Charge Qg @ Vgs	105nC
	Forward Voltage Vf	4.4V
	Maximum Gate Source Voltage Vgs	22V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	15.8mm
	Width	5.2mm
	Height	22.74mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 55A
	Maximum Drain Source Voltage Vds 650V
	Series SiC Power
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 50mΩ
	Channel Mode N
	Maximum Power Dissipation Pd 187W
	Typical Gate Charge Qg @ Vgs 105nC
	Forward Voltage Vf 4.4V
	Maximum Gate Source Voltage Vgs 22V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 15.8mm
	Width 5.2mm
	Height 22.74mm
	Automotive Standard No

Datasheet - NTH4L045N065SC1

The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

Highest efficiency

Faster operation frequency

Increased power density

Reduced EMI

Reduced system size

onsemi SiC Power N-Channel MOSFET, 55 A, 650 V N, 4-Pin TO-247 NTH4L045N065SC1

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