onsemi SiC Power Type N-Channel MOSFET, 62 A, 650 V N, 7-Pin TO-263 NTBG045N065SC1
- RS Stock No.:
- 229-6444
- Mfr. Part No.:
- NTBG045N065SC1
- Manufacturer:
- onsemi
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TWD393.00
(exc. GST)
TWD412.65
(inc. GST)
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In Stock
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Units | Per unit |
|---|---|
| 1 - 9 | TWD393.00 |
| 10 - 99 | TWD382.00 |
| 100 - 249 | TWD369.00 |
| 250 - 499 | TWD362.00 |
| 500 + | TWD353.00 |
*price indicative
- RS Stock No.:
- 229-6444
- Mfr. Part No.:
- NTBG045N065SC1
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | SiC Power | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 242W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.8V | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 9.4mm | |
| Length | 10.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series SiC Power | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 242W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.8V | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 9.4mm | ||
Length 10.2mm | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
Related links
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