onsemi NBTLS Type N-Channel MOSFET, 203 A, 80 V N, 8-Pin M0-299A NTBLS1D7N08H
- RS Stock No.:
- 229-6448
- Mfr. Part No.:
- NTBLS1D7N08H
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
TWD335.00
(exc. GST)
TWD351.76
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from November 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD167.50 | TWD335.00 |
| 10 - 98 | TWD162.00 | TWD324.00 |
| 100 - 248 | TWD157.00 | TWD314.00 |
| 250 - 498 | TWD153.50 | TWD307.00 |
| 500 + | TWD150.50 | TWD301.00 |
*price indicative
- RS Stock No.:
- 229-6448
- Mfr. Part No.:
- NTBLS1D7N08H
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 203A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | NBTLS | |
| Package Type | M0-299A | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 167W | |
| Typical Gate Charge Qg @ Vgs | 121nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.9mm | |
| Standards/Approvals | No | |
| Length | 11.78mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 203A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series NBTLS | ||
Package Type M0-299A | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 167W | ||
Typical Gate Charge Qg @ Vgs 121nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 9.9mm | ||
Standards/Approvals No | ||
Length 11.78mm | ||
Automotive Standard No | ||
The ON Semiconductor N-channel power MOSFET has low on state resistance and low gate charge. It has 203 A of drain current. It is used in power tools, battery operated vacuums, UAV/drones, material handling, BMS/storage and home automation.
Minimize conduction losses
Minimize driver losses
Lowers switching noise/EMI
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