onsemi NVMFS6H800N N-Channel MOSFET, 203 A, 80 V Enhancement, 5-Pin DFN
- RS Stock No.:
- 178-4307
- Mfr. Part No.:
- NVMFS6H800NT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 1500 units)*
TWD140,250.00
(exc. GST)
TWD147,270.00
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 1500 - 1500 | TWD93.50 | TWD140,250.00 |
| 3000 + | TWD91.60 | TWD137,400.00 |
*price indicative
- RS Stock No.:
- 178-4307
- Mfr. Part No.:
- NVMFS6H800NT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 203A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Series | NVMFS6H800N | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 85nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.1mm | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Length | 5.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 203A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Series NVMFS6H800N | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 85nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Operating Temperature 175°C | ||
Width 6.1mm | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Length 5.1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Small Footprint (5x6 mm)
Low RDS(on)
Low QG and Capacitance
NVMFS6H800NWF - Wettable Flank Option
PPAP capable
Benefits
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical
Inspection
Applications
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
48V systems
End Products
Motor Control
Load Switch
DC/DC converter
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