Infineon IPD Type N-Channel MOSFET, 50 A, 80 V Enhancement, 3-Pin TO-252 IPD50N08S413ATMA1
- RS Stock No.:
- 229-1833
- Mfr. Part No.:
- IPD50N08S413ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 15 units)*
TWD445.50
(exc. GST)
TWD467.70
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 9,900 unit(s) shipping from January 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | TWD29.70 | TWD445.50 |
| 30 - 75 | TWD28.90 | TWD433.50 |
| 90 - 225 | TWD28.30 | TWD424.50 |
| 240 - 465 | TWD27.50 | TWD412.50 |
| 480 + | TWD26.80 | TWD402.00 |
*price indicative
- RS Stock No.:
- 229-1833
- Mfr. Part No.:
- IPD50N08S413ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 72W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Height | 2.3mm | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 72W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Height 2.3mm | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon n channel MOSFET has 175°C operating temperature and 100 percent avalanche tested.
It is RoHS compliant and AEC Q101 qualified
Related links
- Infineon IPD Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD079N06L3GATMA1
- Infineon IPD Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-252 IPD90N03S4L03ATMA1
- Infineon IPD Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 120 V Enhancement, 3-Pin PG-TO-252
- Infineon IPD Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252