Vishay Dual TrenchFET 2 N-Channel MOSFET, 257 A, 30 V Enhancement, 8-Pin PowerPAIR 6 x 5F SiZF906BDT-T1-GE3

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Subtotal (1 pack of 5 units)*

TWD499.00

(exc. GST)

TWD523.95

(inc. GST)

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Units
Per unit
Per Pack*
5 - 45TWD99.80TWD499.00
50 - 95TWD96.80TWD484.00
100 - 245TWD94.80TWD474.00
250 - 995TWD92.80TWD464.00
1000 +TWD90.40TWD452.00

*price indicative

Packaging Options:
RS Stock No.:
228-2941
Mfr. Part No.:
SiZF906BDT-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

257A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAIR 6 x 5F

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0021Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

83W

Typical Gate Charge Qg @ Vgs

25nC

Maximum Gate Source Voltage Vgs

20V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Dual N-Channel 30 V (D-S) MOSFET.

100 % Rg and UIS tested

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