Vishay E Type N-Channel MOSFET, 16.3 A, 850 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 228-2867
- Mfr. Part No.:
- SIHG21N80AEF-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 25 units)*
TWD2,077.50
(exc. GST)
TWD2,181.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from June 08, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 75 | TWD83.10 | TWD2,077.50 |
| 100 - 475 | TWD81.00 | TWD2,025.00 |
| 500 + | TWD79.00 | TWD1,975.00 |
*price indicative
- RS Stock No.:
- 228-2867
- Mfr. Part No.:
- SIHG21N80AEF-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16.3A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Series | E | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 179W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16.3A | ||
Maximum Drain Source Voltage Vds 850V | ||
Series E | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 179W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Related links
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-247 SIHG21N80AEF-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-251
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220