Vishay TrenchFET Type P-Channel MOSFET, 46 A, 80 V Enhancement, 8-Pin SO-8 SI7469ADP-T1-RE3
- RS Stock No.:
- 228-2831
- Mfr. Part No.:
- SI7469ADP-T1-RE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD316.00
(exc. GST)
TWD331.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 5,990 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD63.20 | TWD316.00 |
| 50 - 95 | TWD61.40 | TWD307.00 |
| 100 - 245 | TWD59.60 | TWD298.00 |
| 250 - 995 | TWD58.20 | TWD291.00 |
| 1000 + | TWD56.60 | TWD283.00 |
*price indicative
- RS Stock No.:
- 228-2831
- Mfr. Part No.:
- SI7469ADP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 19.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 73.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 42.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 19.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 73.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 42.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Automotive Standard No | ||
The Vishay TrenchFET P-Channel power MOSFET is use for load switch, battery switch and power management.
100 % Rg and UIS tested
Related links
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