Vishay TrenchFET Type P-Channel MOSFET, 5.4 A, 80 V Enhancement, 6-Pin TSOP Si3129DV-T1-GE3
- RS Stock No.:
- 228-2817
- Mfr. Part No.:
- Si3129DV-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
TWD460.00
(exc. GST)
TWD483.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 5,875 unit(s) shipping from January 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | TWD18.40 | TWD460.00 |
| 50 - 75 | TWD17.90 | TWD447.50 |
| 100 - 225 | TWD17.50 | TWD437.50 |
| 250 - 975 | TWD17.00 | TWD425.00 |
| 1000 + | TWD16.60 | TWD415.00 |
*price indicative
- RS Stock No.:
- 228-2817
- Mfr. Part No.:
- Si3129DV-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.4A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TSOP | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 82.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 4.2W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.4A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TSOP | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 82.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 4.2W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Vishay TrenchFET P-Channel power MOSFET is use for Power management of portable and consumer load switch and DC/DC converters.
100 % Rg and UIS tested
Related links
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