Vishay N-Channel 100 V N-Channel MOSFET, 150 A, 100 V, 3-Pin TO-263 SUM70042E-GE3
- RS Stock No.:
- 225-9969
- Mfr. Part No.:
- SUM70042E-GE3
- Manufacturer:
- Vishay
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 225-9969
- Mfr. Part No.:
- SUM70042E-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | N-Channel 100 V | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 278W | |
| Forward Voltage Vf | 800mV | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 84nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.875mm | |
| Standards/Approvals | No | |
| Width | 10.414mm | |
| Height | 4.826mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series N-Channel 100 V | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 278W | ||
Forward Voltage Vf 800mV | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 84nC | ||
Maximum Operating Temperature 175°C | ||
Length 15.875mm | ||
Standards/Approvals No | ||
Width 10.414mm | ||
Height 4.826mm | ||
Automotive Standard No | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
TrenchFET power MOSFET
Maximum 175 °C junction temperature
Very low Qgd reduces power loss from passing through V(plateau)
100 % Rg and UIS tested
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