Vishay N-Channel 100 V Type N-Channel MOSFET, 110 A, 100 V, 8-Pin SO-8 SIR5102DP-T1-RE3
- RS Stock No.:
- 225-9926
- Mfr. Part No.:
- SIR5102DP-T1-RE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD487.00
(exc. GST)
TWD511.35
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 5,990 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD97.40 | TWD487.00 |
| 50 - 95 | TWD95.00 | TWD475.00 |
| 100 - 245 | TWD92.80 | TWD464.00 |
| 250 - 995 | TWD90.60 | TWD453.00 |
| 1000 + | TWD88.40 | TWD442.00 |
*price indicative
- RS Stock No.:
- 225-9926
- Mfr. Part No.:
- SIR5102DP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | N-Channel 100 V | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.6mΩ | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 6.25W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 5.26mm | |
| Length | 6.25mm | |
| Width | 1.12 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series N-Channel 100 V | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.6mΩ | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 6.25W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 5.26mm | ||
Length 6.25mm | ||
Width 1.12 mm | ||
Automotive Standard No | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
TrenchFET Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
Related links
- Vishay N-Channel 100 V Type N-Channel MOSFET 100 V, 8-Pin SO-8
- Vishay N-Channel 100 V Type N-Channel MOSFET 100 V, 3-Pin TO-220
- Vishay N-Channel 100 V Type N-Channel MOSFET 100 V, 3-Pin TO-220 SUP70042E-GE3
- Vishay N-Channel 100 V Type N-Channel MOSFET 100 V, 3-Pin TO-263
- Vishay N-Channel 100 V Type N-Channel MOSFET 100 V N, 7-Pin SC-70
- Vishay N-Channel 100 V Type N-Channel MOSFET 100 V, 3-Pin TO-263 SUM70042E-GE3
- Vishay N-Channel 100 V Type N-Channel MOSFET 100 V N, 7-Pin SC-70 SQA700CEJW-T1_GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8