Vishay N-Channel 100 V Type N-Channel MOSFET, 9 A, 100 V N, 7-Pin SC-70 SQA700CEJW-T1_GE3
- RS Stock No.:
- 225-9941
- Mfr. Part No.:
- SQA700CEJW-T1_GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 50 units)*
TWD640.00
(exc. GST)
TWD672.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 1,850 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | TWD12.80 | TWD640.00 |
| 100 - 200 | TWD12.50 | TWD625.00 |
| 250 - 450 | TWD12.20 | TWD610.00 |
| 500 - 950 | TWD11.90 | TWD595.00 |
| 1000 + | TWD11.70 | TWD585.00 |
*price indicative
- RS Stock No.:
- 225-9941
- Mfr. Part No.:
- SQA700CEJW-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SC-70 | |
| Series | N-Channel 100 V | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 990mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 0.86V | |
| Maximum Power Dissipation Pd | 13.6W | |
| Typical Gate Charge Qg @ Vgs | 6.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Length | 2.05mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SC-70 | ||
Series N-Channel 100 V | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 990mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 0.86V | ||
Maximum Power Dissipation Pd 13.6W | ||
Typical Gate Charge Qg @ Vgs 6.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Length 2.05mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
TrenchFET power MOSFET
AEC-Q101 qualified
Wettable flank terminals
100 % Rg and UIS tested
Related links
- Vishay N-Channel 100 V Type N-Channel MOSFET 100 V N, 7-Pin SC-70
- Vishay N-Channel 30 V Type N-Channel MOSFET 30 V, 7-Pin SC-70
- Vishay N-Channel 30 V Type N-Channel MOSFET 30 V, 7-Pin SC-70 SQA470CEJW-T1_GE3
- Vishay ThunderFET Type N-Channel MOSFET 100 V Enhancement, 6-Pin SC-70 SIA416DJ-T1-GE3
- Vishay SIA Type N-Channel MOSFET 100 V Enhancement, 7-Pin SC-70-6L SIA112LDJ-T1-GE3
- Vishay SIA Type N-Channel MOSFET 100 V Enhancement, 7-Pin SC-70-6L
- Vishay N-Channel 100 V Type N-Channel MOSFET 100 V, 3-Pin TO-220
- Vishay N-Channel 100 V Type N-Channel MOSFET 100 V, 3-Pin TO-220 SUP70042E-GE3