Infineon Dual OptiMOS 2 N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin TDSON IPG20N06S4L26AATMA1

RS Stock No.:: 223-8523
Mfr. Part No.:: IPG20N06S4L26AATMA1
Manufacturer:: Infineon

Infineon Dual OptiMOS 2 N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin TDSON IPG20N06S4L26AATMA1

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Subtotal (1 pack of 15 units)*

TWD717.00

(exc. GST)

TWD752.85

(inc. GST)

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Units	Per unit	Per Pack*
15 - 15	TWD47.80	TWD717.00
30 - 75	TWD46.60	TWD699.00
90 - 225	TWD45.40	TWD681.00
240 - 465	TWD44.30	TWD664.50
480 +	TWD41.10	TWD616.50

*price indicative

RS Stock No.:: 223-8523
Mfr. Part No.:: IPG20N06S4L26AATMA1
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TDSON
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	26mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	15nC
	Maximum Power Dissipation Pd	33W
	Maximum Gate Source Voltage Vgs	16V
	Forward Voltage Vf	1.3V
	Transistor Configuration	Dual
	Maximum Operating Temperature	175°C
	Width	5.9mm
	Length	5.15mm
	Standards/Approvals	RoHS
	Height	1mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 60V
	Package Type TDSON
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 26mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 15nC
	Maximum Power Dissipation Pd 33W
	Maximum Gate Source Voltage Vgs 16V
	Forward Voltage Vf 1.3V
	Transistor Configuration Dual
	Maximum Operating Temperature 175°C
	Width 5.9mm
	Length 5.15mm
	Standards/Approvals RoHS
	Height 1mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Datasheet - IPG20N06S4L26AATMA1

Infineon OptiMOS Series MOSFET, 60V Maximum Drain Source Voltage, 20A Maximum Continuous Drain Current - IPG20N06S4L26AATMA1

This MOSFET is a dual N-channel surface-mount transistor designed for power switching and control in demanding environments. It combines low conduction losses with modest gate drive requirements to support high-current applications in automotive and industrial systems where temperature tolerance and Compact packaging are important.

Features and Benefits:

• 60V drain rating enables medium-voltage switching applications
• 20A continuous drain current supports substantial load currents
• 26mΩ Rds(on) reduces conduction losses during operation
• 15nC typical gate charge minimises gate-drive energy
• 33W maximum power dissipation allows significant heat handling
• 16V maximum gate-source protection preserves gate integrity

Applications

• Suitable for automotive power stages requiring AEC-Q101 qualification
• Used for DC-DC converters in vehicular systems
• Ideal for motor-drive half-bridge circuits on Compact boards
• Can be used for high-current load switching in industrial control
• Used with thermal management designs for elevated operating temperatures

What package type is used for Compact PCB implementation?

It is supplied in an 8-pin TDSON package suited to surface mounting.

How well does it cope with elevated ambient temperatures?

The device is rated to operate up to 175°C maximum operating temperature.

What protection limits exist for the gate electrode?

Gate excursions are limited by a 16V maximum gate-source voltage.

How many transistor elements are present per chip?

There are two elements per chip in the dual configuration.

What environmental or materials standard does it meet?

The component has RoHS approval for restricted-substance compliance.