Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 40 A, 25 V Enhancement, 8-Pin TISON-8

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Subtotal (1 reel of 5000 units)*

TWD149,500.00

(exc. GST)

TWD157,000.00

(inc. GST)

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Units
Per unit
Per Reel*
5000 - 20000TWD29.90TWD149,500.00
25000 +TWD29.30TWD146,500.00

*price indicative

RS Stock No.:
214-8976
Mfr. Part No.:
BSC0910NDIATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

25V

Series

OptiMOS

Package Type

TISON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.9mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.87V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

10 V

Typical Gate Charge Qg @ Vgs

23nC

Maximum Power Dissipation Pd

2.5W

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Height

1.1mm

Length

5mm

Width

6 mm

Standards/Approvals

RoHS, IEC61249-2-21, JEDEC1

Number of Elements per Chip

2

Automotive Standard

No

The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. The Dual N-channel OptiMOS MOSFETs, comes Halogen-free according to IEC61249-2-21 and Pb-free lead plating; RoHS compliant.

Monolithic integrated Schottky-like diode

Optimized for high performance buck converters

100% avalanche tested

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