Infineon IPP60R Type N-Channel MOSFET, 26 A, 600 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 222-4928
- Mfr. Part No.:
- IPP60R120P7XKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
TWD2,970.00
(exc. GST)
TWD3,118.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 400 unit(s) shipping from June 15, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | TWD59.40 | TWD2,970.00 |
| 150 - 200 | TWD57.10 | TWD2,855.00 |
| 250 + | TWD53.60 | TWD2,680.00 |
*price indicative
- RS Stock No.:
- 222-4928
- Mfr. Part No.:
- IPP60R120P7XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPP60R | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 95W | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.45mm | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPP60R | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 95W | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 9.45mm | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Related links
- Infineon IPP60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R120P7XKSA1
- Infineon IPP60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon IPP60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon IPP60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R060C7XKSA1
- Infineon IPP60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R022S7XKSA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 IPB60R120P7ATMA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220