Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 26 A, 600 V Enhancement, 3-Pin TO-263 IPB60R120P7ATMA1
- RS Stock No.:
- 214-4368
- Mfr. Part No.:
- IPB60R120P7ATMA1
- Manufacturer:
- Infineon
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TWD787.00
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TWD826.35
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 245 | TWD157.40 | TWD787.00 |
| 250 - 495 | TWD153.60 | TWD768.00 |
| 500 + | TWD151.00 | TWD755.00 |
*price indicative
- RS Stock No.:
- 214-4368
- Mfr. Part No.:
- IPB60R120P7ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | 600V CoolMOS P7 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 95W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.02mm | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series 600V CoolMOS P7 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 95W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.02mm | ||
Height 4.5mm | ||
Automotive Standard No | ||
Infineon 600V CoolMOS P7 Series MOSFET, 600V Drain Source Voltage, 26A Continuous Drain Current - IPB60R120P7ATMA1
This MOSFET is a high-voltage N-channel enhancement device designed for switching and power-conversion tasks in demanding thermal environments. It operates across an extended temperature range and is intended for surface-mount assembly in power electronic circuits where high-voltage blocking and significant continuous current capability are required.
Features and Benefits:
• 600V drain voltage enables high-voltage system designs
• 26A continuous current supports robust load handling
• 120mΩ Rds(on) reduces conduction losses during operation
• 36nC typical gate charge allows predictable drive sizing
• 95W maximum power dissipation permits elevated power throughput
• 0.9V forward voltage limits diode drop in synchronous circuits
• 26A continuous current supports robust load handling
• 120mΩ Rds(on) reduces conduction losses during operation
• 36nC typical gate charge allows predictable drive sizing
• 95W maximum power dissipation permits elevated power throughput
• 0.9V forward voltage limits diode drop in synchronous circuits
Applications
• Suitable for offline switch-mode power supplies
• Ideal for resonant and hard-switching converters
• Used with high-voltage motor-drive front ends
• Can be used for auxiliary power rails in industrial equipment
• Appropriate for high-temperature electronics cabinets
• Ideal for resonant and hard-switching converters
• Used with high-voltage motor-drive front ends
• Can be used for auxiliary power rails in industrial equipment
• Appropriate for high-temperature electronics cabinets
What package type does it use for board mounting?
It is supplied in a TO-263 package configured for surface mounting, facilitating thermal conduction to a PCB land pattern.
How does the device tolerate extreme temperatures in operation?
It is specified to function from -55°C up to 150°C, allowing use in environments with wide thermal swings.
What gate drive limitations should I observe?
The maximum gate-to-source voltage rating is 20V, so drive circuits must remain within this threshold to avoid gate damage.
What switching behaviour impacts layout decisions?
The device’s typical gate charge of 36nC and its Rds(on) value influence gate-driver current needs and copper width for minimising I2R losses.
Related links
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
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