Infineon IPD50R N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252 IPD60R180C7ATMA1

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Subtotal (1 reel of 2500 units)*

TWD105,500.00

(exc. GST)

TWD110,775.00

(inc. GST)

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Units
Per unit
Per Reel*
2500 - 10000TWD42.20TWD105,500.00
12500 +TWD41.00TWD102,500.00

*price indicative

RS Stock No.:
222-4901
Mfr. Part No.:
IPD60R180C7ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

IPD50R

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

68W

Forward Voltage Vf

900mV

Typical Gate Charge Qg @ Vgs

24nC

Length

6.73mm

Height

2.41mm

Width

6.22mm

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Enables increasing switching frequency without loss in efficiency

Measure showing key parameter for light load and full load efficiency

Doubling the switching frequency will half the size of magnetic components

Smaller packages for same R DS(on)

Can be used in many more positions for both hard and soft switching topologies

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