Infineon IPD50R Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 222-4901
- Mfr. Part No.:
- IPD60R180C7ATMA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 2500 units)*
TWD102,500.00
(exc. GST)
TWD107,625.00
(inc. GST)
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- Shipping from November 03, 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 10000 | TWD41.00 | TWD102,500.00 |
| 12500 + | TWD39.80 | TWD99,500.00 |
*price indicative
- RS Stock No.:
- 222-4901
- Mfr. Part No.:
- IPD60R180C7ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPD50R | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPD50R | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Width 6.22mm | ||
Length 6.73mm | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Enables increasing switching frequency without loss in efficiency
Measure showing key parameter for light load and full load efficiency
Doubling the switching frequency will half the size of magnetic components
Smaller packages for same R DS(on)
Can be used in many more positions for both hard and soft switching topologies
Related links
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