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Infineon IPD50R N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252 IPD50R800CEAUMA1

RS Stock No.:: 222-4900
Mfr. Part No.:: IPD50R800CEAUMA1
Manufacturer:: Infineon

Infineon IPD50R N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252 IPD50R800CEAUMA1

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Subtotal (1 pack of 25 units)*

TWD405.00

(exc. GST)

TWD425.25

(inc. GST)

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Units	Per unit	Per Pack*
25 - 25	TWD16.20	TWD405.00
50 - 75	TWD15.80	TWD395.00
100 - 225	TWD15.40	TWD385.00
250 - 475	TWD15.00	TWD375.00
500 +	TWD14.60	TWD365.00

*price indicative

RS Stock No.:: 222-4900
Mfr. Part No.:: IPD50R800CEAUMA1
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	500V
	Series	IPD50R
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	800mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	12.4nC
	Forward Voltage Vf	830mV
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	40W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	6.22mm
	Length	6.73mm
	Height	2.41mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 500V
	Series IPD50R
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 800mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 12.4nC
	Forward Voltage Vf 830mV
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 40W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 6.22mm
	Length 6.73mm
	Height 2.41mm
	Automotive Standard No

Datasheet - IPD50R800CEAUMA1

The Infineon 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Reduced energy stored in output capacitance (E oss)

High body diode ruggedness

Reduced reverse recovery charge (Q rr )

Reduced gate charge (Q g )

Infineon IPD50R N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252 IPD50R800CEAUMA1

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