DiodesZetex DMT N-Channel MOSFET, 16.1 A, 60 V Enhancement, 8-Pin VDFN DMT64M8LCG-7
- RS Stock No.:
- 222-2881
- Mfr. Part No.:
- DMT64M8LCG-7
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
TWD345.00
(exc. GST)
TWD362.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 1,350 unit(s) shipping from September 21, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | TWD34.50 | TWD345.00 |
| 50 - 90 | TWD33.60 | TWD336.00 |
| 100 - 240 | TWD32.80 | TWD328.00 |
| 250 - 990 | TWD31.90 | TWD319.00 |
| 1000 + | TWD31.30 | TWD313.00 |
*price indicative
- RS Stock No.:
- 222-2881
- Mfr. Part No.:
- DMT64M8LCG-7
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16.1A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMT | |
| Package Type | VDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 47.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Maximum Power Dissipation Pd | 2.16W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Width | 0.8mm | |
| Standards/Approvals | No | |
| Height | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16.1A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMT | ||
Package Type VDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 47.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 10V | ||
Maximum Power Dissipation Pd 2.16W | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Width 0.8mm | ||
Standards/Approvals No | ||
Height 3.3mm | ||
Automotive Standard No | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and load switch.
High Conversion Efficiency
Low RDS(ON)—Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
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